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| geometry process details principal device type ctlsh2-40m832 gross die per 4 inch wafer 4,608 process CPD79 schottky rectifier 2 amp schottky rectifier chip die size 49 x 49 mils die thickness 9.8 mils anode bonding pad area 39 x 39 mils top side metalization al/ni/au - 30,000?/3,000?/1,500? back side metalization ti/ni/au - 1,600?/5,500?/1,600? www.centralsemi.com r0 (19-july 2010) http://
process CPD79 typical electrical characteristics www.centralsemi.com r0 (19-july 2010) http:// |
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